Search results for "LASER DEPOSITION"
showing 10 items of 80 documents
Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy
2008
Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …
Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer
2014
Multilayered BiFeO3 (BFO)/LaAlO3 (LAO) thin film samples were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behav…
New process of silicon carbide purification intended for silicon passivation
2017
Abstract In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto s…
Raman measurements on GaN thin films for PV - purposes
2012
Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…
Stability/Instability of Conductivity and Work Function Changes of ITO Thin Films, UV-Irradiated in Air or Vacuum. Measurements by the Four-Probe Met…
2001
This study shows that, after UV-irradiation in air or vacuum, conductivity and work function of ITO and In2O3 come back to their initial values in a few hours or minutes. In addition to this instability, one of the reported drawbacks of ITO is the indium diffusion into the organic layers of operating LED, leading to performance degradation. So, we have reconsidered ITO as transparent anode and explored alternatives such as NiO.
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Radiation-induced defects in antiferroelectric thin films
2003
Abstract Radiation effects on highly oriented antiferroelectric (AFE) PbZrO3 (PZ) films with a thickness of approximately 400 nm are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. The films were prepared by pulsed laser deposition (PLD). The dielectric constant was measured in the frequency range from 1 to 250 kHz in a stepwise cooling mode (∼2 °C min−1) from 400 °C to room temperature before and after irradiation to a fast neutron fluence of 2×1022 m−2 (E>0.1 MeV). After irradiation, the films were annealed in several steps up to ∼400 °C to remove the radiation-induced defects. The results are di…
Photocatalysis of rhodamine B and methyl orange degradation under solar light on ZnO and Cu2O thin films
2020
We report the photocatalytic properties of ZnO and Cu2O thin films deposited on glass substrates at room temperature by DC sputtering and pulsed laser deposition. The photoactivity of the films was investigated through the degradation of rhodamine B (RhB) and methyl orange (MO) under solar light. In order to select the most suitable film of ZnO for the of RhB and MO degradation, the relationship between the characteristics (e.g. energy levels and defects concentration) of ZnO films and their effectiveness in the photocatalytic yield of RhB and MO been studied, where several films were deposited by using different oxygen partial pressures (PO2: 0.05–1.3 mbar), while Cu2O films were grown und…
Normal and mixed state Hall effect in (Hg0.9Re0.1)Ba2CaCu2O6+δ fully textured HTSC thin films
2004
Abstract Temperature and magnetic field dependence of the Hall effect in the normal and mixed state of fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTSC thin films prepared by laser ablation deposition have been studied. The longitudinal resistivity ρxx and Hall resistivity ρyx of HgRe-1212 superconductor thin films were measured for a wide range of magnetic fields from 125 mT to 12 T with the field perpendicular to the ab plane and the current in the ab plane. A sign change of the Hall resistivity is observed in fields below 3 T in the region close to the superconducting onset temperature. The temperature dependencies ρxx ∝ T and ρyx ∝ 1/T have been observed for HgRe-1212 thin films…
Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization
2014
Yttrium iron garnet (YIG, Y [subscript 3]Fe[subscript 5]O[subscript 12]) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd[subscript 3]Ga[subscript 5]O[subscript 12]) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm[superscript −3]), in-plane easy axis, and damping parameters as low as 2.2 × 10[superscript −4]. These high quality YIG thin films are useful in the investigation…